Unleashing the Power of Mechanics on CMOS: Hafnia Nanoelectromechanical Systems For RF Frequency Control

Abstract:
Access to nanoscale piezoelectric transducers in advanced semiconductor processes enables realization of acoustic resonators on CMOS chips. Monolithically integrated acoustic resonators facilitate the creation of on-chip clocks, local oscillators, and filters with improved performance, size, and cost.
The discovery of ferroelectricity in fluorite-structured oxides, such as hafnia and zirconia, has augured the emergence of the long-coveted CMOS piezoelectric transducer. Atomic-layer-deposited hafnia-zirconia are already used, in amorphous form, as high-k dielectrics in advanced semiconductor nodes. Once subjected to proper atomic engineering, these fluorites can take polar crystalline forms with large piezoelectric coupling that enables creation of high-performance acoustic resonators.
In this talk, I will present an overview on CMOS-based fluorite ferroelectrics and their properties pertained to nanoelectromechanical systems (NEMS) resonator performance merits. I will introduce our efforts on (1) developing hafnia-zirconia piezoelectric transducers for creation of super-high-frequency NEMS resonators with high electromechanical-coupling and quality-factor, and intrinsic switchability, (2) development of three-dimensional acoustic resonator technology based on integrating hafnia-zirconia on semiconductor fins, enabling massive integration of multi-band filter arrays and wideband switch-free multiplexers, and (3) development of ultra-stable oscillators using temperature-compensated hafnia-zirconia resonators.
Speaker(s): Prof. Roozbeh Tabrizian,
Agenda:
6:30 – 6:50 PM Zoom Registration & Networking
6:50 – 7:00 PM Announcements & Polling
7:00 – 7:45 PM Invited Talk
7:45 – 8:00 PM Questions & Answers
Virtual: https://events.vtools.ieee.org/m/400594