Interconnect Reliability in Advanced Packaging and Heterogeneous Integration (no fee)

In advanced packaging, as newer forms of interconnects emerge to meet the demand for high density and high performance, interconnect reliability is becoming more complex and more critical. Finer pitch interconnects in advanced packaging are more susceptible to failures due to electromigration, interfacial reactions etc. Wafer level packaging, Cu direct bonding and other advanced packaging technologies, present new considerations in interconnect reliability. At the same time, the growing adoption of heterogeneous integration leads to increased diversity of interconnects (with different geometries, materials, and interfaces) in the same package, with complex (and often interactive) reliability failure modes and mechanisms.
As electronic products become more pervasive in application, interconnect reliability must be considered holistically with regard to environmental conditions, from thermal, mechanical, and thermomechanical, to electrical and electrochemical. High frequency applications demand considerations of interconnect materials for signal integrity. High thermal density and high current density can have increased impact on interconnect reliability. These considerations will impact reliability engineering for semiconductor devices, from design for reliability, to accelerated testing and analysis.
Meanwhile, sustainability of electronic products demands environmentally friendly materials and processes. Understanding of the failure mechanisms for different interconnect materials at various levels (wafer, chip, package, and system) of the semiconductor package is of great importance to interconnect reliability in advanced packaging and heterogeneous integration.
Speaker(s): Dongkai Shangguan, ,
Birck Nanotechnology Center #1001, 1205 W State St, West Lafayette, Indiana, United States, Virtual: https://events.vtools.ieee.org/m/370292